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X0405MF 1AA2产品简介:
ICGOO电子元器件商城为您提供X0405MF 1AA2由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 X0405MF 1AA2价格参考¥6.66-¥13.64。STMicroelectronicsX0405MF 1AA2封装/规格:晶闸管 - SCR, SCR 600V 1.35A Sensitive Gate Through Hole TO-202。您可以下载X0405MF 1AA2参考资料、Datasheet数据手册功能说明书,资料中有X0405MF 1AA2 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | SCR 4A 50UA 600V TO202-3SCR 4.0 Amp 600 Volt |
产品分类 | SCR - 单个分离式半导体 |
GateTriggerCurrent-Igt | 50 uA |
GateTriggerVoltage-Vgt | 0.8 V |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体闸流管,SCR,STMicroelectronics X0405MF 1AA2- |
数据手册 | |
产品型号 | X0405MF 1AA2 |
SCR类型 | 灵敏栅极 |
不重复通态电流 | 33 A |
产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26297http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26298 |
产品种类 | SCR |
供应商器件封装 | TO-202 |
保持电流Ih最大值 | 5 mA |
关闭状态漏泄电流(在VDRMIDRM下) | 5 uA |
其它名称 | 497-14175 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM144/CL1220/SC127/PF70450?referrer=70071840 |
包装 | 散装 |
商标 | STMicroelectronics |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Bulk |
封装/外壳 | TO-202 无接片 |
封装/箱体 | TO-202-3 |
工作温度 | -40°C ~ 125°C |
工厂包装数量 | 250 |
开启状态RMS电流-ItRMS | 1.35 A |
最大工作温度 | + 125 C |
最大栅极峰值反向电压 | 8 V |
最小工作温度 | - 40 C |
栅极触发电压-Vgt | 0.8 V |
栅极触发电流-Igt | 50 uA |
标准包装 | 250 |
正向电压下降 | 1.8 V |
电压-断态 | 600V |
电压-栅极触发(Vgt)(最大值) | 800mV |
电压-通态(Vtm)(最大值) | 1.8V |
电流-不重复浪涌50、60Hz(Itsm) | 30A,33A |
电流-保持(Ih)(最大值) | 5mA |
电流-断态(最大值) | 5µA |
电流-栅极触发(Igt)(最大值) | 50µA |
电流-通态(It(AV))(最大值) | 900mA |
电流-通态(It(RMS))(最大值) | 1.35A |
系列 | X04 |
额定重复关闭状态电压VDRM | 600 V |
X04 Series 4A SCRS SENSITIVE MAINFEATURES: Symbol Value Unit IT(RMS) 4 A VDRM/VRRM 600and800 V IGT 50to200 m A DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications wheretheavailablegatecurrentislimited,suchas capacitive discharge ignitions, motor control in TO202-3 kitchenaids,overvoltagecrowbarprotectioninlow (X04xxF) powersupplies... ABSOLUTERATINGS(limitingvalues) Symbol Parameter Value Unit IT(RMS) RMSon-statecurrent(180°conductionangle) Tl=60°C 4 A Tamb=25°C 1.35 IT Averageon-statecurrent(180°conductionangle) Tl=60°C 2.5 A (AV) Tamb=25°C 0.9 ITSM Nonrepetitivesurgepeakon-state tp=8.3ms 33 A current Tj=25°C tp=10ms 30 I²t I²tValueforfusing tp=10ms Tj=25°C 4.5 A2S Criticalrateofriseofon-statecurrent dI/dt I =2xI ,tr£ 100ns F=60Hz Tj=125°C 50 A/µs G GT IGM Peakgatecurrent tp=20µs Tj=125°C 1.2 A PG(AV) Averagegatepowerdissipation Tj=125°C 0.2 W Tstg Storagejunctiontemperaturerange - 40to+150 °C Tj Operatingjunctiontemperaturerange -40to+125 September2000-Ed:3 1/5
X04 Series ELECTRICALCHARACTERISTICS(Tj=25°C,unlessotherwisespecified) Symbol TestConditions X04xx Unit 02 05 IGT MIN. _ 20 µA V =12V R =140W MAX. 200 50 D L VGT MAX. 0.8 V VGD VD=VDRM RL=3.3kW RGK=1kW Tj=125°C MIN. 0.1 V VRG IRG=10m A MIN. 8 V IH IT=50mA RGK=1kW MAX. 5 mA IL IG=1mA RGK=1kW MIN. 6 mA dV/dt VD= 67%VDRM RGK=1kW Tj=110°C MIN. 10 15 V/µs VTM ITM=8A tp=380µs Tj=25°C MAX. 1.8 V Vt0 Thresholdvoltage Tj=125°C MAX. 0.95 V Rd Dynamicresistance Tj=125°C MAX. 100 mW IDRM Tj=25°C MAX. 5 µA VDRM=VRRM RGK=1kW I Tj=125°C 1 mA RRM THERMALRESISTANCES Symbol Parameter Value Unit Rth(j-l) Junctiontoleads(DC) 15 °C/W Rth(j-a) Junctiontoambient(DC) 100 PRODUCTSELECTOR Voltage PartNumber Sensitivity Package 600V 800V X0402MF X 200µA TO202-3 X0402NF X 200µA TO202-3 X0405MF X 50µA TO202-3 X0405NF X 50µA TO202-3 2/5
X04 Series ORDERINGINFORMATION OTHERINFORMATION PartNumber Marking Weight BaseQuantity Packingmode X04xxyF1AA2 X04xxyF 0.8g 250 Bulk X04xxyF0AA2 X04xxyF 0.8g 50 Tube Note:xx=sensitivity, y=voltage Fig. 1: Maximum average power dissipation Fig. 2-1: Average and D.C. on-state current versusaverageon-statecurrent. versus leadtemperature. Fig. 2-2: Average and D.C. on-state current Fig. 3: Relative variation of thermal impedance versus ambient temperature (device mounted on junctiontoambient versus pulseduration. FR4withrecommendedpadlayout). 3/5
X04 Series Fig. 4: Relative variation of gate trigger current, Fig. 5: Relative variation of holding current holding current and latching current versus versus gate-cathoderesistance(typicalvalues). junctiontemperature(typicalvalues). Fig. 6: Relative variation of dV/dt immunity Fig. 7: Relative variation of dV/dt immunity versusgate-cathoderesistance(typicalvalues). versus gate-cathode capacitance (typical values). Fig. 8: Surge peak on-state current versus Fig. 9: Non-repetitive surge peak on-state numberofcycles. current for a sinusoidal pulse with width tp<10ms, andcorrespondingvalueofI²t. 4/5
X04 Series Fig. 10: On-state characteristics (maximum values). PACKAGEMECHANICALDATA TO202-3(Plastic) DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 10.1 0.398 C 7.3 0.287 D 10.5 0.413 F 1.5 0.059 H 0.51 0.020 J 1.5 0.059 M 4.5 0.177 N 5.3 0.209 N1 2.54 0.100 O 1.4 0.055 P 0.7 0.028 Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequences ofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgranted byimplicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubject tochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.STMicroelectronicsproductsarenot authorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSTMicroelectronics. ©TheSTlogoisaregisteredtrademarkofSTMicroelectronics ©2000STMicroelectronics-PrintedinItaly-AllRightsReserved STMicroelectronicsGROUPOFCOMPANIES Australia-Brazil-China-Finland-France-Germany-HongKong-India-Italy-Japan-Malaysia-Malta-Morocco Singapore-Spain-Sweden-Switzerland-UnitedKingdom http://www.st.com 5/5